| PART |
Description |
Maker |
| AS8650B-ZQFM-01 AS8650B-ZQFP-01 |
High-efficient Power Management Device with High-speed CAN Interface
|
austriamicrosystems AG
|
| HFM306 HFM308 HFM301 HFM305 |
SMD, High Efficient Rectifier, 600V, 3A, Silicon Diode
SMD, High Efficient Rectifier, 1000V, 3A, Silicon Diode
SMD, High Efficient Rectifier, 50V, 3A, Silicon Diode
SMD, High Efficient Rectifier, 400V, 3A, Silicon Diode
|
Rectron Semiconductor
|
| BUL44D2-D |
High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-in Efficient Antisaturation Network
|
ON Semiconductor
|
| YR292-B5538 |
2U High-Density and Power-Efficient Platform for VHD/VDI Applications
|
List of Unclassifed Man...
|
| VLMR51Y1Z1-GS08 VLMK51Y1Z1-GS08 |
Power SMD LED PLCC2 Plus High efficient AlInGaP technology
|
Vishay Siliconix
|
| HDBS103G HDBS101G HDBS105G HDBS102G HDBS107G HDBS1 |
1.0 AMP. Glass Passivated Bridge High Efficient Rectifier 50 to 1000 Volts
39 OHM 3W WIREWOUND POWER RESISTOR 1%
|
MCC[Micro Commercial Components]
Micro Commercial Components Corp.
|
| MJD18002D2-D |
Bipolar NPN Transistor High Speed, High Gain Bipolar NPN Power Transistor with Integrated Collector-Emitter Diode and Built-In Efficient Antisaturation Network
|
ON Semiconductor
|
| HER601 |
HIGH EFFICIENT
|
EIC discrete Semiconductors
|
| HER20105 |
HIGH EFFICIENT
|
EIC discrete Semiconductors
|
| HERA1607G HERA1601G |
Rectifier: High Efficient
|
Taiwan Semiconductor
|
| HS1M HS1B |
High Efficient Rectifier
|
Yangzhou yangjie electronic co., ltd
|
| HERF1008G HERF1003G HERF1006G HERF1007G |
Rectifier: High Efficient
|
Taiwan Semiconductor
|
